Program Schedule
Keynote Talks: 35 minutes for the presentation + 5 minutes for Q&A
Invited Talks: 20 minutes for the presentation + 5 minutes for Q&A
September 29, 2025 (Monday)
Opening Day & Technical Sessions
8:30 - 9:25
Opening Ceremony
Chair: Shimeng Yu (Georgia Institute of Technology)
8:30 - 8:45
Opening Remarks
Shimeng Yu (Georgia Institute of Technology) & Program Introduction: Ilya Karpov (Intel)
8:45 - 9:25
Keynote Talk Session
Chair: Suman Datta, Georgia Tech
8:45 - 9:25
Memory Technology Innovations to Enable the AI Revolution
Nirmal Ramaswamy (Micron)
9:25 - 9:50
| Coffee Break
Also Time for poster presenters to assemble posters
9:50 - 11:05
Session 01 - Ferroelectric memories I
Chair: Eilam Yalon, Technion
9:50 - 10:15
Pathway for ferroelectric memory with low voltage operation using ultra-thin HfO.5ZrO.5O2
Kasidit Toprasertpong (University of Tokyo, Japan)
10:15 - 10:40
Ultimately Thin Sliding Ferroelectric Tunnel Junctions for Artificial Neural Networks
Moshe Ben Shalom (Tel Aviv University, Israel)
10:40 - 11:05
Discrete Polarization Switching in Nanoscale BEOL FE-FETs
Yanjie Shao / Jesus del Alamo (MIT, USA)
11:10 - 12:00
Session 02 - RRAM I
Chair: Scott Sills, Micron
11:10 - 11:35
High-Order In-Memory Hardware Accelerator for Combinatorial Optimization
Dmitri (Dima) Strukov (University of California Santa Barbara, USA)
11:35 - 12:00
Filament-free Multilayer Bulk RRAM for Energy Efficient Compute in Memory
Duygu Kuzum (University of California San Diego, USA)
12:00 - 13:20
| Lunch
Posters will be available
13:20 - 15:00
Session 03 - MRAM
Chair: Daniele Leonelli, Huawei
13:20 - 13:45
A 64 Gb DDR4 STT MRAM using Timing Controlled Discharging reading scheme for 1Selector 1MTJ cross point cell of 0.001681um^2
Akira Katayama (Kioxia, Japan)
13:45 - 14:10
Stochastic Spintronic Devices and Oscillator Networks for Energy-Based Analog Computing
Louis Hutin (CEA-Leti)
14:10 - 14:35
Next Generation MRAM for Energy-Efficient AI Applications
Shan Wang (Stanford University)
14:35 - 15:00
Energy-Efficient Spintronic Devices for Memory and Computing by New Materials, New Physics and Voltage Control
Jian-Ping Wang (University of Minnesota)
15:00 - 17:00
| Coffee Break & Poster Session
Poster Session 01 (posters will be available through the day)
September 30, 2025 (Tuesday)
Technical Sessions & Research Presentations
8:00 - 8:40
Keynote Talk Session
Chair: Asif Khan, Georgia Tech
8:00 - 8:40
Application-Specific Memory Technologies
Chris Petti (SanDisk, USA)
8:40 - 9:30
Session 04 - Neuromorphic Materials and Devices
Chair: Daniele Leonelli, Huawei
8:40 - 9:05
Fully parallel stochastic gradient descent on 1k metal-insulator-graphene (MIG) crossbar array
Tania Roy (Duke University, USA)
9:05 - 9:30
Fusing Brain-Inspired Computing and Sensing Devices for Enhanced Intelligent Robotics
Xinglong Ji (Tsinghua University, China)
9:30 - 9:55
| Coffee Break
9:55 - 10:45
Session 05 - NVDRAM
Chair: Scott Sills, Micron
9:55 - 10:20
3D Charge Coupled Memory Bringing Down the Memory Wall
Maarteen Rosmeulen (IMEC, Belgium)
10:20 - 10:45
Planar Channel-All-Around (P-CAA) Oxide FETs with One-step Process for High-density 1T1C 3D DRAM
Zhaoqiang Bai (Beijing Superstring Academy of Memory Technology, China) / Di Geng (Chinese Academy of Sciences, China)
10:50 - 11:40
Session 06 - PCM
Chair: Ilya Karpov, Intel
10:50 - 11:15
Microscopic model of the operation of the Single-chalcogenide X-point Memory
Paolo Fantini (Micron, Italy)
11:15 - 11:40
Latest Progress in Phase Change Memory Development for Next-Generation eNVM Targeting 1x & 0x Technology Nodes
Guillaume Bourgeois (CEA-Leti, France)
11:40 - 13:00
| Lunch
Posters will be available
13:00 - 14:40
Session 07 - RRAM II
Chair: Eilam Yalon, Technion
13:00 - 13:25
Multiscale modeling and simulation of resistive switching memory (RRAM) for reliability and neuromorphic applications
Valerio Milo (Applied Materials, USA)
13:25 - 13:50
3D vertical resistive switching random-access memory (3D-VRRAM) for high density, high accuracy in-memory computing
Davide Bridarolli (Politecnico di Milano, Italy)
13:50 - 14:15
RRAM for Edge AI: from Devices, Circuit to System
Bin Gao (Tsinghua University, China)
14:15 - 14:40
Metrology for 2D materials-based non-volatile memory concepts
Umberto Celano (Arizona State University, USA)
14:40 - 17:00
| Coffee Break & Poster Session
Poster Session 02 (posters will be available through the day)
October 1, 2025 (Wednesday)
Final Day & Closing Ceremony
8:00 - 8:40
Keynote Talk Session
Chair: Shimeng Yu, Georgia Tech
8:00 - 8:40
Memory in the AI Era
Victor Zhirnov (SRC and SMART USA, US)
8:40 - 9:30
Session 08 - New Memory Concepts
Chair: Daniele Leonelli, Huawei
8:40 - 9:05
Photonic Non-Volatile Memory Devices
Aaron Thean (National University of Singapore, Singapore)
9:05 - 9:30
Engineering Non-Volatile Memory Materials: From Defect Discovery to Device Optimization
Gaurav Thareja (Applied Materials, USA)
9:30 - 9:55
| Coffee Break
9:55 - 10:45
Session 09 - PCM II
Chair: Ilya Karpov, Intel
9:55 - 10:20
InTe-based Multi-Stack Selector-Only Memory
Hyunsang Hwang (POSTEC, Korea)
10:20 - 10:45
Thermoelectric and Non-linear Electronic Transport, Filament Formation and Gradual Set in Phase Change Memory Cells
Ali Gokirmak (University of Connecticut, USA)
10:50 - 12:05
Session 10 - Ferroelectric memories II
Chair: Maarten Rosmeulen, IMEC
10:50 - 11:15
Assessing the Scalability of HfO2 for Next-Generation Non-Volatile Memory Technologies
Ruben Alcala / Uwe Schroeder (NaMLab, Germany)
11:15 - 11:40
STEM EBIC imaging for characterizing ferroelectric HZO
Chris Regan (University of California Los Angeles, USA)
11:40 - 12:05
Pushing the limits of 3D NAND scaling using ferroelectrics
Prasanna Venkat Ravindran (Georgia Tech, USA)
12:05 - 13:20
| Lunch
Also Time for poster presenters to remove the posters
13:20 - 14:10
Session 11 - Ferroelectric memories III
Chair: Ilya Karpov, Intel
13:20 - 13:45
Capacitive memory window for non-destructive read operation in ferroelectric capacitors for memory applications
Shankha Mukherjee (IMEC, Belgium)
13:45 - 14:10
High-Speed Probing of Ferroelectric Capacitors: Switching Dynamics and Non-Destructive Readout
Eilam Yalon (Technion, Israel)
14:10 - 14:35
Scaling Split-Gate Flash for Edge aCIM Devices
Nhan Do (Microchip, USA)
14:35 - 15:05
Poster Awards and Closing Ceremony